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this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. may 2014 docid025806 rev 1 1/14 stf11n65m2, STFI11N65M2 n-channel 650 v, 0.6 typ., 7 a mdmesh ii plus? low q g power mosfets in to-220fp and i 2 pakfp packages datasheet - preliminary data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) x area vs previous generation ? low gate input resistance ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using a new generation of mdmesh? technology: mdmesh ii plus? low qg. these revolutionary power mosfets associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. they are therefore suitable for the most demanding high efficiency converters. ' * 6 am01476v1 to-220fp 1 2 3 1 2 3 i pakfp 2 order codes v ds r ds(on) max i d stf11n65m2 650 v 0.67 7 a STFI11N65M2 table 1. device summary order codes marking package packaging stf11n65m2 11n65m2 to-220fp tube STFI11N65M2 i 2 pakfp www.st.com
contents stf11n65m2, STFI11N65M2 2/14 docid025806 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
docid025806 rev 1 3/14 stf11n65m2, STFI11N65M2 electrical ratings 14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d (1) 1. the value is rated according to rthj-case and limited by package. drain current (continuous) at t c = 25 c 7 a i d (1) drain current (continuous) at t c = 100 c 4.4 a i dm (2) 2. pulse width limited by t jmax drain current (pulsed) 28 a p tot (1) total dissipation at t c = 25 c 25 w dv/dt (3) 3. i sd 7 a, di/dt 400 a/ s; v ds peak < v (br)dss , v dd =80% v (br)dss . peak diode recovery voltage slope (starting t j = 25 c, i d = i as , v dd = 50 v) 15 v/ns dv/dt (4) 4. v ds 520 v mosfet dv/dt ruggedness 50 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 5 c/w r thj-amb thermal resistance junction-amb max 62.5 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 1.5 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 110 mj
electrical characteristics stf11n65m2, STFI11N65M2 4/14 docid025806 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v 1 a v ds = 650 v, t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 234v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 3.5 a 0.6 0.67 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 410 - pf c oss output capacitance - 20 - pf c rss reverse transfer capacitance -0.95-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 520 v, v gs = 0 - 83 - pf r g intrinsic gate resistance f = 1 mhz open drain - 6.4 - q g total gate charge v dd = 520 v, i d = 7 a, v gs = 10 v (see figure 15 ) -12.5-nc q gs gate-source charge - 3.2 - nc q gd gate-drain charge - 5.8 - nc
docid025806 rev 1 5/14 stf11n65m2, STFI11N65M2 electrical characteristics 14 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 325 v, i d = 3.5 a, r g = 4.7 , v gs = 10 v (see figure 14 and 19 ) -9.5-ns t r rise time - 7.5 - ns t d(off) turn-off delay time - 26 - ns t f fall time - 15 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 7 a i sdm (1) (2) 1. pulse width limited by safe operating area 2. test condition is referred to through-hole package source-drain current (pulsed) - 28 a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 7 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 7 a (2) , di/dt = 100 a/ s v dd = 60 v (see figure 16 ) -318 ns q rr reverse recovery charge - 2.5 nc i rrm reverse recovery current - 15.5 a t rr reverse recovery time i sd = 7 a, di/dt = 100 a/ s v dd = 60 v, t j =150 c (see figure 16 ) -437 ns q rr reverse recovery charge - 3.2 nc i rrm reverse recovery current - 15 a
electrical characteristics stf11n65m2, STFI11N65M2 6/14 docid025806 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 1ms t c =150c tamb=25c single pulse 100 s 1 10 10ms gipg200120141643fsr figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized v (br)dss vs temperature figure 7. static drain-source on-resistance i d 6 4 2 0 0 10 v ds (v) (a) 5 15 8 5v 6v v gs = 8, 9, 10v 20 10 7v 12 14 gipd241020131645fsr i d 4 0 0 4 v gs (v) 8 (a) 2 6 8 12 v ds =19v 14 10 6 2 10 gipd241020131653fsr v (br)dss -50 t j (c) (norm) 0 0.93 0.95 0.97 0.99 1.01 i d =1 ma 50 100 1.03 -25 25 75 125 1.05 1.07 1.09 gipd251020131007sa r ds(on) 0.600 0.590 0.580 0.570 0 2 i d (a) ( ) 1 3 0.610 4 5 v gs =10v 6 0.620 0.630 7 gipg200120141659fsr
docid025806 rev 1 7/14 stf11n65m2, STFI11N65M2 electrical characteristics 14 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. output capacitance stored energy v gs 6 4 2 0 0 q g (nc) (v) 6 8 4 10 v dd =520v 300 200 100 0 400 v ds 8 10 500 v ds (v) i d =7a 2 12 12 gipd251020131029sa c 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 100 1000 gipd251020131055sa v gs(th) 0.8 0.7 t j (c) (norm) -50 0.9 i d =250a 0 50 100 -25 25 75 1.0 1.1 125 gipd251020131132sa r ds(on) 1.3 1.1 0.9 0.7 t j (c) (norm) 0.5 i d =3.5a -50 0 50 100 -25 25 75 125 1.5 1.7 1.9 2.1 2.3 2.5 v gs =10v gipg200120141706fsr v sd 0 2 i sd (a) (v) 1 5 3 4 0 0.2 0.4 0.6 t j =-50c t j =150c t j =25c 0.8 1 6 1.2 1.4 gipd251020131114sa eoss 0 v ds (v) (j) 200 100 500 0 1 2 3 300 400 600 gipd251020131124sa
test circuits stf11n65m2, STFI11N65M2 8/14 docid025806 rev 1 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid025806 rev 1 9/14 stf11n65m2, STFI11N65M2 package mechanical data 14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data stf11n65m2, STFI11N65M2 10/14 docid025806 rev 1 figure 20. to-220fp drawing 7012510_rev_k_b
docid025806 rev 1 11/14 stf11n65m2, STFI11N65M2 package mechanical data 14 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 ? 33.2
package mechanical data stf11n65m2, STFI11N65M2 12/14 docid025806 rev 1 figure 21. i 2 pakfp (to-281) drawing table 10. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 uhy$
docid025806 rev 1 13/14 stf11n65m2, STFI11N65M2 revision history 14 5 revision history table 11. document revision history date revision changes 09-may-2014 1 first release.
stf11n65m2, STFI11N65M2 14/14 docid025806 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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